SSF4607D ? silikron semiconductor co.,ltd. 20 12 . 03 . 22 version : 1. 0 page 1 of 9 www.silikron.com main product characteristics: v dss - 3 0 v r ds (on) 19 m ( typ . ) i d - 25 a features and benefits : description : absolute m ax rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v (silicon limited) - 25 a i d @ tc = 100c continuous drain current, v gs @ 10v - 20 i dm pulsed drain current - 60 p d @tc = 25c power dissipati on 41 w v ds drain - source voltage - 3 0 v v gs gate - to - source voltage 20 v t j t stg operating junction and storage temperature range - 55 to + 150 c thermal resistance symbol characterizes typ. max. units r jc junction - to - case 3 /w r j a junction - to - ambient ( t 10s ) 25 /w junction - to - ambient (pcb mounted, steady - state) 50 /w marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? spec ial designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 150 operating temperature it utilizes the latest trench processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. to - 252 d g s
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 2 of 9 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - s ource breakdown voltage - 3 0 v v gs = 0v, i d = - 250a r ds(on) static drain - to - source on - resistance 19 35 m v gs = - 10 v, i d = - 6 a 29 58 v gs = - 4 .5 v, i d = - 5 a v gs(th) gate threshold voltage - 1.2 - 2.4 v v ds = v gs , i d = - 250a - 1.4 t j = 1 25 i dss drain - to - source leakage current - 1 a v ds = - 2 4 v,v gs = 0v i gss gate - to - source forward leakage 10 0 n a v gs = 20 v - 1 0 0 v gs = - 20 v q g total gate charge 2 7 nc i d = - 20 a , v ds = - 25 v , v gs = - 10 v q gs gate - to - source charge 3.6 q gd gate - to - drain("miller") charge 9.1 t d(on) turn - on delay time 10.7 n s v gs = - 10 v, v ds = - 15 v, r l = 0.75 , i d = - 20 a t r rise time 39 t d(off) turn - off delay time 25.8 t f fall time 6.4 c iss input capacitance 1188 pf v gs = 0v , v ds = - 15 v , ? = 1m hz c oss output capacitance 1 73 c rss reverse transfer capacitance 1 39 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) - 25 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) - 100 a v sd diode forward voltage - 0.7 7 - 1 v i s = - 1 a, v gs =0v t rr reverse recovery time 23 n s t j = 25c, i f = - 20 a, di/dt = 100a/s q rr r everse recovery charge 1 4 nc
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 3 of 9 www.silikron.com test circuits and waveforms switch waveforms: notes: calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max junction temperature. the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction - to - case thermal impedence which is mea sured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) = 150 c. gate charge test circuit: s s witch ing time test circ uit : eas test circuit:
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 4 of 9 www.silikron.com t ypical electrical and thermal characteristics figure 2. drain - to - source breakdown voltage vs. temperature figure 1: typical output characteristics fig ure 3. normalized on - resistance vs. case temperature figure 4: power dissipation vs. case temperature
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 5 of 9 www.silikron.com fig ure 5 . m aximum drain current vs case temperature t ypical electrical and thermal characteristi cs fig ure 6 . ga te - charge characteristics fig ure 7 . typical capacitance vs. drain - to - source voltage case temperature
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 6 of 9 www.silikron.com t ypical electrical and thermal characteristics fig ure 8. n ormalized maximum transient thermal impedance
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 7 of 9 www.silikron.com mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) to - 252 package outline dimension
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 8 of 9 www.silikron.com ordering and marking information device marking: SSF4607D package (available) to - 252 ( dpak ) operating temperature range c : - 55 to 150 oc devices per unit package type units/ tape tape s/inner box units/inner box inner boxes/carton box units/carton box to - 2 52 2500 1 25 00 5 125 00 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) tj=125 to 1 5 0 @ 80% of max v dss /v ces /v r 168 hours 500 hours 1000 hou rs 3 lots x 77 devices high temperature gate bias(htgb) tj=150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 4607d ? si likron semiconductor co.,ltd. 20 11 . 03 . 22 version : 1. 0 page 9 of 9 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can h andle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult wi th your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events t hat could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or tran smitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (incl uding circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delive ry specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service: sales@ silik ron .com technical support : technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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